Direct White Noise Characterization of Short-Channel MOSFETs

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- nonzero-drain-bias ( ${V}_{d}$ ) conditions for first time, without recourse to a hot source, commonly needed figure measurement. The dependence intensity on bias clearly shows at notation="LaTeX">${V}_{d} \boldsymbol = {0}$ V > with its gate-bias-dependent suppression. An empirical expression Fano factor (shot-noise suppression factor) that well-behaved even exactly suitable measurement-based proposed. direct measurement approach could allow more accurate predictive modeling RF than has conventionally been possible.